Beilstein J. Nanotechnol.2023,14, 951–963, doi:10.3762/bjnano.14.78
-temperatureALD; PEALD; plasma-enhanced ALD; XPS; Introduction
The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater
saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level.
Keywords: atomic layer deposition (ALD); cobalt; low
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Figure 1:
Schematic sketch of the scia Atol 200 processing tool.
Beilstein J. Nanotechnol.2017,8, 467–474, doi:10.3762/bjnano.8.50
illustration of the Al2O3 deposited by the lowtemperatureALD process.
a) Tapping mode atomic force microscopy (tAFM) morphology and b) schematic illustration of the graphene channel. c) Optical microscopy and d) schematic illustration of the final back-gated device with the detail of the involved series
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Figure 1:
a) Comparison between tapping mode atomic force microscopy (tAFM) morphologies of low temperature (...